Evaluation of plasma parameters on PEALD deposited TaCN

[Display omitted] ► Tuning TaCN deposited material from TaN-like to TaC-like was possible using plasma. ► Influence of plasma power on TaCN properties is higher than influence of plasma energy. ► Mechanism of TBTDET molecule breaking down by H2 plasma was introduced. In this article influence of pla...

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Published in:Microelectronic engineering Vol. 107; pp. 156 - 160
Main Authors: Piallat, Fabien, Beugin, Virginie, Gassilloud, Remy, Michallon, Philippe, Dussault, Laurent, Pelissier, Bernard, Asikainen, Timo, Maes, Jan Willem, Martin, François, Morin, Pierre, Vallée, Christophe
Format: Journal Article Conference Proceeding
Language:English
Published: Amsterdam Elsevier B.V 01-07-2013
Elsevier
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Summary:[Display omitted] ► Tuning TaCN deposited material from TaN-like to TaC-like was possible using plasma. ► Influence of plasma power on TaCN properties is higher than influence of plasma energy. ► Mechanism of TBTDET molecule breaking down by H2 plasma was introduced. In this article influence of plasma parameters on TaCN deposition using Plasma Enhanced Atomic Layer Deposition (PEALD) is studied. TaCN is deposited on 300mm Si substrate with the organometallic precursor Tertiary-ButylimidoTrisDiEthyl-aminoTantalum (TBTDET) and H2/Ar plasma at different plasma power. Thickness, density, roughness, resistivity, crystallography and composition of the obtained layers were analysed by X-ray Reflection (XRR), 4 points probe measurement, X-ray Diffraction (XRD) and X-ray Photoelectron Spectrometry (XPS) respectively. Results show an evolution of the material with the increase of plasma power from a TaN-like to a TaC-like material.
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ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2012.08.020