Monte Carlo simulation of the CHISEL flash memory cell

• Published in: IEEE transactions on electron devices Vol. 47; no. 10; pp. 1873 - 1881
• Main Authors: Bude, J.D., Pinto, M.R., Smith, R.K.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-10-2000; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Channels; Computer simulation; Devices; Flash memory (computers); Hand tools; Monte Carlo methods; MOSFETs; Programming
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/16.870565

This work shows how physically-based hot carrier simulation was used to understand the importance of CHannel Initiated Secondary ELectron (CHISEL) injection in scaled MOSFETs, and how it was used to develop a powerful CHISEL-based technique for low voltage flash programming. Furthermore, it is shown how CHISEL flash addresses many of the disadvantages of CHE programming techniques, making it an ideal candidate for low-voltage, low-power Gigabit flash memories.