Optical excitation and external photoluminescence quantum efficiency of Eu3+ in GaN

• Published in: Scientific reports Vol. 4; no. 1; p. 5235
• Main Authors: de Boer, W. D. A. M., McGonigle, C., Gregorkiewicz, T., Fujiwara, Y., Tanabe, S., Stallinga, P.
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group UK 10-06-2014; Nature Publishing Group
• Subjects: 639/301/1019/1020/1089; 639/624/399; Efficiency; Experiments; Humanities and Social Sciences; Lasers; Light emitting diodes; Luminescence; multidisciplinary; Optics; Photons; Science; Spectrum analysis
• ISSN: 2045-2322; 2045-2322
• DOI: 10.1038/srep05235

We investigate photoluminescence of Eu-related emission in a GaN host consisting of thin layers grown by organometallic vapor-phase epitaxy. By comparing it with a reference sample of Eu-doped Y
2
O
3
, we find that the fraction of Eu
3+
ions that can emit light upon optical excitation is of the order of 1%. We also measure the quantum yield of the Eu-related photoluminescence and find this to reach (~10%) and (~3%) under continuous wave and pulsed excitation, respectively.