Three level charge pumping on a single interface trap

• Published in: IEEE electron device letters Vol. 23; no. 2; pp. 94 - 96
• Main Authors: Militaru, L., Masson, P., Guegan, G.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-02-2002; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Charge; Charge carrier processes; Charge pumps; Computer simulation; Current measurement; Electron traps; Emission; Energy capture; Energy levels; Energy states; Mathematical models; Metal oxide semiconductors; MOSFETs; Photonic band gap; Probes; Pumping; Silicon
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/55.981317

We present results obtained by performing two and three level charge pumping (CP) technique on a single trap present at the SiO/sub 2//Si interface of deep-submicron MOS transistor (50 nm length). Using two-level CP method, we have measured the emission time constant of a single trap and we have verified by numerical simulations the Shockley-Read-Hall (SRH) theory. Three level CP measurements allow an accurate determination of the capture cross section and the energy level of the trap. For the particular trap presented in this paper, we have found E/sub t/ - E/sub V/ /spl ap/ 0.83 eV, /spl sigma//sub n/ /spl ap/ 6 /spl times/ 10/sup -17/ cm/sup 2/.