Transient current technique for charged traps detection in silicon bonded interfaces

• Published in: AIP advances Vol. 9; no. 2; pp. 025307 - 025307-9
• Main Authors: Bronuzzi, J., Bouvet, D., Charrier, C., Fournel, F., García, M. F., Mapelli, A., Moll, M., Rouchouze, E., Sallese, J. M.
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 01-02-2019; American Institute of Physics- AIP Publishing LLC; AIP Publishing LLC
• Subjects: Bonding; CMOS; Electrical properties; Engineering Sciences; Microelectromechanical systems; Microfluidic devices; Radiation detectors; Silicon substrates; Solid state devices; Transient current
• ISSN: 2158-3226; 2158-3226
• DOI: 10.1063/1.5079999

Wafer bonding is an established technology for the manufacturing of silicon-on-insulator (SOI) substrates, micro-electromechanical systems (MEMS) and microfluidic devices. Low temperature direct bonding techniques can be of particular interest for the fabrication of monolithic radiation sensors. Such techniques allow the joining of various absorbers on the backside of thinned CMOS circuity without intermediate layers or through vias. This paper presents a method for the electrical characterization of such bonded interfaces based on the Transient Current Technique (TCT). This method can be extended to the investigation of any type of solid-state devices.