How Humidity Affects on Scanning Nonlinear Dielectric Microscope

The dopant type and carrier concentration in a patterned semiconductor sample with three different doping regions were measured by scanning nonlinear dielectric microscope (SNDM). SNDM is used in the way of a scanning capacitance microscopy (SCM) with a new detection mechanism based on frequency det...

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Bibliographic Details
Published in:	E-journal of surface science and nanotechnology Vol. 4; pp. 454 - 459
Main Authors:	Kuramochi, Hiromi, Ando, Kazunori, Hasumura, Satoshi, Watanabe, Kazutoshi, Yokoyama, Hiroshi
Format:	Journal Article
Language:	English
Published:	The Japan Society of Vacuum and Surface Science 01-01-2006
Subjects:	Atomic force microscopy Metal-oxide-semiconductor (MOS) structures Nano-scale imaging and measurement
Online Access:	Get full text
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Summary:	The dopant type and carrier concentration in a patterned semiconductor sample with three different doping regions were measured by scanning nonlinear dielectric microscope (SNDM). SNDM is used in the way of a scanning capacitance microscopy (SCM) with a new detection mechanism based on frequency detection. The topographic, pn-distribution and the carrier concentration images of a patterned semiconductor sample were measured at the same time. In concurrence with a demonstration of the SNDM-SCM measurements, the influence of an adsorbed water layer on measurements is evaluated in the vacuum and in the air over a relative humidity (RH) range of 20 to 80%. Adverse affects on capacitance measurements due to the variation in RH are revealed. [DOI: 10.1380/ejssnt.2006.454]
ISSN:	1348-0391 1348-0391
DOI:	10.1380/ejssnt.2006.454