High-frequency performance of lateral p-n junction photodiodes

• Published in: IEEE journal of quantum electronics Vol. 37; no. 6; pp. 830 - 836
• Main Authors: Tsutsui, N., Ryzhii, V., Khmyrova, I., Vaccaro, P.O., Taniyama, H., Aida, T.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01-06-2001; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Analytical models; Applied sciences; Carrier transport; Charge carrier processes; Electric potential; Electronics; Exact sciences and technology; Frequency estimation; Gallium arsenide; Mathematical analysis; Mathematical models; Optoelectronic devices; P-n junctions; Performance analysis; Photodetectors; Photodiodes; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Surface emitting lasers; Transit time; Voltage; Transport process; Quantum well; Transit time; Performance characteristic; Capacitance; p n junction; Photodiode; Modeling; Electrical characteristic
• ISSN: 0018-9197; 1558-1713
• DOI: 10.1109/3.922782

We developed an analytical device model for quantum well lateral p-n junction photodiodes (LJPDs). The model takes into account the features of the carrier transport in LJPDs and their geometry, which ensure short transit times and a low capacitance. This model is used for calculating the LJPD's characteristics as functions of the signal frequency, bias voltage, and structural parameters and for the estimation of the LJPD ultimate performance.