Investigation of spectral dependences of the absorption coefficient in InGaAs layers

Values of the absorption coefficient of InGaAs structures grown by means of gaseous-phase epitaxy from metaloranic compounds have been studied and calculated. Experimental data have been compared to the theoretical model of the absorption spectrum based on the phenomenon of fundamental absorption an...

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Bibliographic Details
Published in:	Journal of communications technology & electronics Vol. 62; no. 3; pp. 331 - 335
Main Authors:	Iakovleva, N. I., Nikonov, A. V.
Format:	Journal Article
Language:	English
Published:	Moscow Pleiades Publishing 01-03-2017 Springer Springer Nature B.V
Subjects:	Absorption Absorption coefficient Absorption rates Analysis Approximation Articles from the Russian Journal Prikladnaya Fizika Chemical vapor deposition Communications Engineering Communications technology Dielectric properties Electric properties Electronics Energy Energy gap Engineering Epitaxy Gallium arsenide Indium Investigations Mathematical models Networks Optical transition Slopes Spectra Studies United States > US InGaAs calculation absorption coefficient Brillouin zone MOCVD dielectric constant epitaxy experimental data
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Summary:	Values of the absorption coefficient of InGaAs structures grown by means of gaseous-phase epitaxy from metaloranic compounds have been studied and calculated. Experimental data have been compared to the theoretical model of the absorption spectrum based on the phenomenon of fundamental absorption and the general theory of direct interband optical transitions. The energy gap width has been graphically calculated from the slope of the experimental absorption characteristic.
Bibliography:	ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23
ISSN:	1064-2269 1555-6557
DOI:	10.1134/S1064226917030226