Effects of Charge Trapping on Memory Characteristics for HfO2-Based Ferroelectric Field Effect Transistors

• Published in: Nanomaterials (Basel, Switzerland) Vol. 13; no. 4; p. 638
• Main Authors: Wang, Jianjian, Bi, Jinshun, Xu, Yannan, Niu, Gang, Liu, Mengxin, Stempitsky, Viktor
• Format: Journal Article
• Language: English
• Published: Basel MDPI AG 06-02-2023; MDPI
• Subjects: charge trapping; Ferroelectric materials; ferroelectric switching; Ferroelectricity; Field effect transistors; Hafnium oxide; HfO2-based FeFET; memory window; Pulse amplitude; Pulse duration; pulse width; Semiconductor devices; Spectrum analysis; Thin films; Transistors; Trapping
• ISSN: 2079-4991; 2079-4991
• DOI: 10.3390/nano13040638

A full understanding of the impact of charge trapping on the memory window (MW) of HfO2-based ferroelectric field effect transistors (FeFETs) will permit the design of program and erase protocols, which will guide the application of these devices and maximize their useful life. The effects of charge trapping have been studied by changing the parameters of the applied program and erase pulses in a test sequence. With increasing the pulse amplitude and pulse width, the MW increases first and then decreases, a result attributed to the competition between charge trapping (CT) and ferroelectric switching (FS). This interaction between CT and FS is analyzed in detail using a single-pulse technique. In addition, the experimental data show that the conductance modulation characteristics are affected by the CT in the analog synaptic behavior of the FeFET. Finally, a theoretical investigation is performed in Sentaurus TCAD, providing a plausible explanation of the CT effect on the memory characteristics of the FeFET. This work is helpful to the study of the endurance fatigue process caused by the CT effect and to optimizing the analog synaptic behavior of the FeFET.