Compact solid-State switched pulsed power and its applications

• Published in: Proceedings of the IEEE Vol. 92; no. 7; pp. 1180 - 1196
• Main Authors: Weihua Jiang, Panchenko, A., Yatsui, K., Takayama, K., Akemoto, M., Nakamura, E., Shimizu, N., Tokuchi, A., Rukin, S., Tarasenko, V.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-07-2004; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Accelerators; Energy storage; FETs; Insulated gate bipolar transistors; Insulation; Power generation; Power semiconductor devices; Power semiconductor switches; Pulse generation; Repetition; Semiconductor devices; Semiconductors; Solid state circuits; Switches; Thyristors
• ISSN: 0018-9219; 1558-2256
• DOI: 10.1109/JPROC.2004.829003

Power semiconductor devices, such as insulated-gate bipolar transistors, metal-oxide-semiconductor field-effect transistors, and static-induction thyristors, are used in different kinds of pulsed power generators developed for different applications. In addition, the semiconductor opening switch is found to have very effective applications in pulsed power generation by inductive energy storage. Semiconductor switches have greatly extended the scales of pulsed power parameters, especially in repetition rate and lifetime. They have also enabled new areas of pulsed power applications, such as accelerators, flue-gas treatment, and gas lasers.