Theory of semiconductor superjunction devices

• Published in: Japanese Journal of Applied Physics Vol. 36; no. 10; pp. 6254 - 6262
• Main Author: FUJIHIRA, T
• Format: Journal Article
• Language: English
• Published: Tokyo Japanese journal of applied physics 01-10-1997
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Miscellaneous; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Power device; Theoretical study; Breakdown voltage; Semiconductor device; Simulation
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/JJAP.36.6254

A new theory of semiconductor devices, called “semiconductor superjunction (SJ) theory”, is presented. To overcome the trade-off relationship between breakdown voltage and on-resistance of conventional semiconductor devices, SJ devices utilize a number of alternately stacked, p- and n-type, heavily doped, thin semiconductor layers. By controlling the degree of doping and the thickness of these layers, according to the SJ theory, this structure operates as a pn junction with low on-resistance and high breakdown voltage. Analytical formulas for the ideal specific on-resistance and the ideal breakdown voltage of SJ devices are theoretically derived. Analysis based on the formulas and device simulations reveals that the on-resistance of SJ devices can be reduced to less than 10
-2
that of conventional devices.