Comprehensive Study of the Electron Scattering Mechanisms in 4H-SiC MOSFETs

• Published in: IEEE transactions on electron devices Vol. 62; no. 8; pp. 2562 - 2570
• Main Authors: Uhnevionak, Viktoryia, Burenkov, Alexander, Strenger, Christian, Ortiz, Guillermo, Bedel-Pereira, Elena, Mortet, Vincent, Cristiano, Fuccio, Bauer, Anton J., Pichler, Peter
• Format: Journal Article
• Language: English
• Published: IEEE 01-08-2015; Institute of Electrical and Electronics Engineers
• Subjects: Current measurement; Doping; MOSFET; Physics; Scattering; Silicon carbide; Temperature dependence; Temperature measurement; Electron mobility; Hall effect; SiC MOSFET; scattering mechanisms; Scattering Mechanisms; SiC Mosfet; Hall Factor
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2015.2447216

The effects of doping concentration and temperature upon the transport properties in the channel of lateral n-channel SiC MOSFETs have been studied using current-voltage and Hall-effect measurements. To interpret the electrical measurements, numerical TCAD simulations have been performed. A simulation methodology that includes the calculation of the Hall factor in the channel of SiC MOSFETs has been developed and applied. In addition, a new model for the bulk mobility has been suggested to explain the temperature dependence of the MOSFET characteristics with different background doping concentrations. Based on the good agreement between the simulated and the measured results, scattering mechanisms in the channel of SiC MOSFETs have been studied.