Quantum sensing and imaging with spin defects in hexagonal boron nitride

• Published in: Advances in physics: X Vol. 8; no. 1
• Main Authors: Vaidya, Sumukh, Gao, Xingyu, Dikshit, Saakshi, Aharonovich, Igor, Li, Tongcang
• Format: Journal Article
• Language: English
• Published: Abingdon Taylor & Francis 31-12-2023; Taylor & Francis Ltd; Taylor & Francis Group
• Subjects: Boron; Boron nitride; Color centers; Defects; Dimensional stability; Electron spin; Heterostructures; Hexagonal boron nitride; Imaging; magnetic field sensing; nanoscale nuclear magnetic resonance; quantum imaging; quantum sensing; Sensitivity enhancement; spin defects; Two dimensional materials
• ISSN: 2374-6149; 2374-6149
• DOI: 10.1080/23746149.2023.2206049

Color centers in hexagonal boron nitride (hBN) have recently emerged as promising candidates for a new wave of quantum applications. Thanks to hBN's high stability and two-dimensional (2D) layered structure, color centers in hBN can be readily integrated into nanophotonic and plasmonic structures on a chip. More importantly, the recently discovered optically addressable spin defects in hBN provide a quantum interface between photons and electron spins for quantum sensing applications. The most well-studied hBN spin defects, the negatively charged boron vacancy (
) spin defects, have been used for quantum sensing of static magnetic fields, magnetic noise, temperature, strain, nuclear spins, paramagnetic spins in liquids, RF signals, and beyond. In particular, hBN nanosheets with spin defects can form van der Waals (vdW) heterostructures with other 2D materials for in situ quantum sensing and imaging. This review summarizes the rapidly evolving field of quantum sensing with spin defects in hBN. We introduce basic properties of hBN spin defects, quantum sensing protocols, and recent experimental demonstrations of quantum sensing and imaging with hBN spin defects. We also discuss methods to enhance their sensitivity. Finally, we envision some potential developments and applications of hBN spin defects.