Breakdown and Recovery of Thin Gate Oxides

Breakdown and Recovery of Thin Gate Oxides

Breakdown events are studied in varying test set-ups with a high time resolution. Often a partial recovery from breakdown is observed within a few ms. Parameters such as device area, stress conditions and parasitic elements prohibit the recovery if they result in a high system impedance. The results...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics Vol. 39; no. 6B; pp. L582 - L584
Main Authors: Twan Bearda, Twan Bearda, Paul W. Mertens, Paul W. Mertens, Marc M. Heyns, Marc M. Heyns, Hans Wallinga, Hans Wallinga, Pierre Woerlee, Pierre Woerlee
Format: Journal Article
Language:English
Published: 01-01-2000
Online Access:Get full text
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Summary:Breakdown events are studied in varying test set-ups with a high time resolution. Often a partial recovery from breakdown is observed within a few ms. Parameters such as device area, stress conditions and parasitic elements prohibit the recovery if they result in a high system impedance. The results suggest the existence of a highly conductive path that can be annihilated during breakdown.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.39.L582