25th Anniversary Article: Recent Advances in n-Type and Ambipolar Organic Field-Effect Transistors

• Published in: Advanced materials (Weinheim) Vol. 25; no. 38; pp. 5372 - 5391
• Main Authors: Zhao, Yan, Guo, Yunlong, Liu, Yunqi
• Format: Journal Article
• Language: English
• Published: Weinheim WILEY-VCH Verlag 11-10-2013; WILEY‐VCH Verlag
• Subjects: ambipolar; electron transporting; n-type; organic field-effect transistor; organic field-effect transistor; n-type; electron transporting; ambipolar
• ISSN: 0935-9648; 1521-4095
• DOI: 10.1002/adma.201302315

The advantages of organic field‐effect transistors, such as low cost, mechanical flexibility and large‐area fabrication, make them potentially useful for electronic applications such as flexible switching backplanes for video displays, radio frequency identifications and so on. A large amount of molecules were designed and synthesized for electron transporting (n‐type) and ambipolar organic semiconductors with improved performance and stability. In this review, we focus on the advances in performance and molecular design of n‐type and ambipolar semiconductors reported in the past few years.
This review focuses on the advances in n‐type and ambipolar semiconductors reported in the past few years. n‐Type and ambipolar semiconducting materials designed for high‐performance OFETs are classified by their chemical structures. The relationships between the chemical structure, energy level, transistor characteristics, stability, etc. are discussed.