Anomalous Photocurrent Reversal Due to Hole Traps in AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

• Published in: Micromachines (Basel) Vol. 13; no. 8; p. 1233
• Main Authors: Lim, Seungyoung, Kim, Tae-Soo, Kang, Jaesang, Kim, Jaesun, Song, Minhyup, Kim, Hyun Deok, Song, Jung-Hoon
• Format: Journal Article
• Language: English
• Published: Basel MDPI AG 31-07-2022; MDPI
• Subjects: Absorption; Activation energy; AlGaN; anomalous photocurrent; Bias; deep ultraviolet; Defects; Efficiency; Electric fields; Energy; Hole traps; Lamps; Lasers; Light emitting diodes; light-emitting diode; photocurrent spectroscopy; Photoelectric effect; Photoelectric emission; Piezoelectricity; Point defects; Recovery time; Spectrum analysis; Temperature dependence; Ultraviolet radiation; South Korea
• ISSN: 2072-666X; 2072-666X
• DOI: 10.3390/mi13081233

The trap states and defects near the active region in deep-ultraviolet (DUV) light-emitting diodes (LED) were investigated through wavelength-dependent photocurrent spectroscopy. We observed anomalous photocurrent reversal and its temporal recovery in AlGaN-based DUV LEDs as the wavelength of illuminating light varied from DUV to visible. The wavelength-dependent photocurrent measurements were performed on 265 nm-emitting DUV LEDs under zero-bias conditions. Sharp near-band-edge (~265 nm) absorption was observed in addition to broad (300–800 nm) visible-range absorption peaks in the photocurrent spectrum, while the current direction of these two peaks were opposite to each other. In addition, the current direction of the photocurrent in the visible wavelength range was reversed when a certain forward bias was applied. This bias-induced current reversal displayed a slow recovery time (~6 h) when the applied forward voltage was removed. Furthermore, the recovery time showed strong temperature dependency and was faster as the sample temperature increased. This result can be consistently explained by the presence of hole traps at the electron-blocking layer and the band bending caused by piezoelectric polarization fields. The activation energy of the defect state was calculated to be 279 meV using the temperature dependency of the recovery time.