Photoluminescence Study of Low Thermal Budget III–V Nanostructures on Silicon by Droplet Epitaxy

• Published in: Nanoscale research letters Vol. 5; no. 10; pp. 1650 - 1653
• Main Authors: Bietti, S, Somaschini, C, Sarti, E, Koguchi, N, Sanguinetti, S, Isella, G, Chrastina, D, Fedorov, A
• Format: Journal Article
• Language: English
• Published: New York Springer New York 18-07-2010; Springer Nature B.V; Springer
• Subjects: Chemistry and Materials Science; Materials Science; Molecular Medicine; Nano Express; Nanochemistry; Nanoscale Science and Technology; Nanotechnology; Nanotechnology and Microengineering; III–V semiconductors; Si integration; Quantum nanostructures; Photoluminescence
• ISSN: 1931-7573; 1556-276X
• DOI: 10.1007/s11671-010-9689-8

We present of a detailed photoluminescence characterization of high efficiency GaAs/AlGaAs quantum nanostructures grown on silicon substrates. The whole process of formation of the GaAs/AlGaAs active layer was realized via droplet epitaxy and migration enhanced epitaxy maintaining the growth temperature ≤350°C, thus resulting in a low thermal budget procedure compatible with back-end integration of the fabricated materials on integrated circuits.