Modeling of statistical low-frequency noise of deep-submicrometer MOSFETs

• Published in: IEEE transactions on electron devices Vol. 52; no. 7; pp. 1576 - 1588
• Main Authors: Wirth, G.I., Jeongwook Koh, da Silva, R., Thewes, R., Brederlow, R.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01-07-2005; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Analog circuits; Applied sciences; Circuit properties; Circuits; Devices; Electric, optical and optoelectronic circuits; Electronic circuits; Electronics; Exact sciences and technology; low-frequency noise (LF-noise); Mathematical analysis; Mathematical models; MOS transistors; MOSFETs; Noise; noise modeling; RF circuits; Semiconductor device modeling; Semiconductor device noise; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Standard deviation; Statistics; Theoretical study. Circuits analysis and design; Transistors; Semiconductor device noise; Analog circuit; Averaging method; MOSFET; low-frequency noise (LF-noise); Circuit simulation; Submicrometer; Analog circuits; noise modeling; 1/f noise; Modeling; RF circuits; Statistical method; s parameter; MOS transistors; Analytical method; Standard deviation; MOS transistor
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2005.850955

The low-frequency noise (LF-noise) of deep-submicrometer MOSFETs is experimentally studied with special emphasis on yield relevant parameter scattering. A novel modeling approach is developed which includes detailed consideration of statistical effects. The model is based on device physics parameters which cause statistical variations in LF-noise behavior of individual devices. Discrete quantities are used and analytical results for the statistical parameters are derived. Analytical equations for average value and standard deviation of noise power are provided. The model is compatible with standard compact models used for circuit simulation.