Effect of shallow and deep donors on the equilibrium electron density of the two-dimensional electron gas in a modulation-doped field-effect transistor

• Published in: IEEE transactions on electron devices Vol. 33; no. 5; pp. 707 - 711
• Main Authors: Subramanian, S., Vengurlekar, A.S., Diwan, A.A.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01-05-1986; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors; Field effect transistor; High electron mobility transistor; Electron density; Electron gas
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/T-ED.1986.22555

A model to calculate the equilibrium electron density of the two-dimensional electron gas in a modulation-doped field-effect transistor that takes into account the simultaneous presence of both shallow and deep donors in the Si-doped AlGaAs is presented. The results of our calculation are compared with earlier theoretical and experimental results.