Degradation of organic field-effect transistors made of pentacene

This article reports degradation experiments on organic thin film transistors using the small organic molecule pentacene as the semiconducting material. Starting with degradation inert p-type silicon wafers as the substrate and SiO2 as the gate dielectric, we show the influence of temperature and ex...

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Bibliographic Details
Published in:	Journal of materials research Vol. 19; no. 7; pp. 1999 - 2002
Main Authors:	Pannemann, Ch, Diekmann, T., Hilleringmann, U.
Format:	Journal Article
Language:	English
Published:	New York, USA Cambridge University Press 01-07-2004
Subjects:	Aging Articles—Organic Electronics Special Section Organic Semiconductor Aging Semiconductor Organic
Online Access:	Get full text
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Summary:	This article reports degradation experiments on organic thin film transistors using the small organic molecule pentacene as the semiconducting material. Starting with degradation inert p-type silicon wafers as the substrate and SiO2 as the gate dielectric, we show the influence of temperature and exposure to ambient air on the charge carrier field-effect mobility, on-off-ratio, and threshold-voltage. The devices were found to have unambiguously degraded over 3 orders of magnitude in maximum on-current and charge carrier field-effect mobility, but they still operated after a period of 9 months in ambient air conditions. A thermal treatment was carried out in vacuum conditions and revealed a degradation of the charge carrier field-effect mobility, maximum on-current, and threshold voltage.
Bibliography:	ark:/67375/6GQ-3N6259R4-M PII:S0884291400094553 ArticleID:09455 istex:97EA6417728FC9C5EE06DF9C9686A2B2EE1E133E ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23
ISSN:	0884-2914 2044-5326
DOI:	10.1557/JMR.2004.0267