Direct evidence for substitutional ion-implanted indium dopants in silicon

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Bibliographic Details
Published in:	Physical review letters Vol. 57; no. 18; pp. 2283 - 2286
Main Authors:	LINDNER, G, HOFSÄSS, H, WINTER, S, BESOLD, B, RECKNAGEL, E, WEYER, G, PETERSEN, J. W
Format:	Journal Article
Language:	English
Published:	Ridge, NY American Physical Society 03-11-1986
Subjects:	Applied sciences Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals; microstructure Doping and impurity implantation in iii-v and ii-vi semiconductors Exact sciences and technology Other techniques and industries Physics Structure of solids and liquids; crystallography Non metal Ion implantation Channeling Substitutional impurities Doping Impurity site Particle blocking Isotopic species Silicon Experimental study Indium
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Description
Bibliography:	ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23
ISSN:	0031-9007 1079-7114
DOI:	10.1103/PhysRevLett.57.2283