Photoluminescence and photoresponse from InSb/InAs-based quantum dot structures

• Published in: Optics express Vol. 20; no. 19; pp. 21264 - 21271
• Main Authors: Gustafsson, Oscar, Karim, Amir, Berggren, Jesper, Wang, Qin, Reuterskiöld-Hedlund, Carl, Ernerheim-Jokumsen, Christopher, Soldemo, Markus, Weissenrieder, Jonas, Persson, Sirpa, Almqvist, Susanne, Ekenberg, Ulf, Noharet, Bertrand, Asplund, Carl, Göthelid, Mats, Andersson, Jan Y, Hammar, Mattias
• Format: Journal Article
• Language: English
• Published: United States 10-09-2012
• Subjects: Detectors; Diodes; Fysik; Growth; Inas; Indium antimonides; Indium arsenide; Infrared Photodetectors; Molecular-Beam Epitaxy; Photodetectors; Photoluminescence; Physics; Semiconductor quantum dots; Semiconductor quantum wells; Vapors
• ISSN: 1094-4087; 1094-4087
• DOI: 10.1364/OE.20.021264

InSb-based quantum dots grown by metal-organic vapor-phase epitaxy (MOVPE) on InAs substrates are studied for use as the active material in interband photon detectors. Long-wavelength infrared (LWIR) photoluminescence is demonstrated with peak emission at 8.5 µm and photoresponse, interpreted to originate from type-II interband transitions in a p-i-n photodiode, was measured up to 6 µm, both at 80 K. The possibilities and benefits of operation in the LWIR range (8-12 µm) are discussed and the results suggest that InSb-based quantum dot structures can be suitable candidates for photon detection in the LWIR regime.