Opto-electrical characterization of transparent conducting sand dune shaped indium doped ZnO nanostructures

• Published in: Journal of alloys and compounds Vol. 560; pp. 147 - 150
• Main Authors: Shelke, Vrushali, Bhole, M.P., Patil, D.S.
• Format: Journal Article
• Language: English
• Published: Kidlington Elsevier B.V 25-05-2013; Elsevier
• Subjects: Annealing; Atomic force microscopy; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Deposition; Electronic properties; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport in multilayers, nanoscale materials and structures; Exact sciences and technology; Glass; Indium; Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids); Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Nanocrystalline materials; Nanocrystals and nanoparticles; Nanomaterials; Nanostructure; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures; Physics; Sand dunes; Semiconductors; Silicon substrates; Spin coating; Atomic force microscopy; Electronic properties; Semiconductors; Spin coating; Annealing; Electrical conductivity; Semiconductor materials; Impurity density; Refractive index; Doping; Indium additions; Nanostructures; Absorption coefficients; Thin films; Energy gap; Zinc oxide; Spin-on coating; Figure of merit
• ISSN: 0925-8388; 1873-4669
• DOI: 10.1016/j.jallcom.2013.01.160

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► Sand dune shaped nanostructures of indium doped ZnO has been deposited. ► Low resistivity value of 1.27Ω-cm was achieved for film deposited on silicon substrate. ► Films annealed at temperature of 375°C for an hour gave the best opto-electrical results. ► Highest figure of merit was observed for the film with 6% indium doping concentration. ► Increase in the band gap and decrease in the refractive index was obtained after indium doping.
Low resistive highly transparent indium doped ZnO films have been deposited by spin coating technique. Effect of doping concentrations and post annealing temperatures were studied by optimizing the films on the silicon and glass substrates. The sand dune shaped nanostructures were observed by atomic force microscopy and other structural properties were examined with scanning electron microscopy and X-ray diffraction. Low resistivity value of 1.27Ωcm was achieved for film deposited on silicon substrate. Films deposited on the glass substrate showed the high transmittance above 80%. Effect of annealing temperature on band gap, figure of merit and refractive index are highlighted in the study.