Highly spectrum-selective ultraviolet photodetector based on p-NiO/n-IGZO thin film heterojunction structure

• Published in: Optics express Vol. 23; no. 21; pp. 27683 - 27689
• Main Authors: Li, H K, Chen, T P, Hu, S G, Li, X D, Liu, Y, Lee, P S, Wang, X P, Li, H Y, Lo, G Q
• Format: Journal Article
• Language: English
• Published: United States 19-10-2015
• ISSN: 1094-4087; 1094-4087
• DOI: 10.1364/oe.23.027683

Ultraviolet photodetector with p-n heterojunction is fabricated by magnetron sputtering deposition of n-type indium gallium zinc oxide (n-IGZO) and p-type nickel oxide (p-NiO) thin films on ITO glass. The performance of the photodetector is largely affected by the conductivity of the p-NiO thin film, which can be controlled by varying the oxygen partial pressure during the deposition of the p-NiO thin film. A highly spectrum-selective ultraviolet photodetector has been achieved with the p-NiO layer with a high conductivity. The results can be explained in terms of the "optically-filtering" function of the NiO layer.