OMVPE of GaAsSbN for long wavelength emission on GaAs

• Published in: Journal of crystal growth Vol. 261; no. 2; pp. 398 - 403
• Main Authors: Peake, G.M., Waldrip, K.E., Hargett, T.W., Modine, N.A., Serkland, D.K.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 19-01-2004; Elsevier
• Subjects: A3. Metalorganic chemical vapor deposition; A3. Organometallic vapor phase epitaxy; A3. Quantum wells; B1. Antimonides; B2. Semiconducting quarternary alloys; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Exact sciences and technology; Iii-v semiconductors; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Photoluminescence; Physics; A3. Quantum wells; B1. Antimonides; A3. Organometallic vapor phase epitaxy; B2. Semiconducting quarternary alloys; A3. Metalorganic chemical vapor deposition; Arsenic Nitrides; Temperature dependence; Annealing; Inorganic compounds; Growth rate; Hole density; Gallium nitrides; Photoluminescence; Hall effect; VPE; Crystal growth from vapors; Experimental study; Antimony Nitrides; Excitons; MOVPE method; Kinetics; Quaternary compounds; III-V semiconductors
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2003.11.034

GaAsSbN was grown by organometallic vapor phase epitaxy (OMVPE) as an alternative material to InGaAsN for long wavelength emission on GaAs substrates. OMVPE of GaAsSbN using trimethylgallium, 100% arsine, trimethylantimony, and 1,1-dimethylhydrazine was found to be kinetically limited at growth temperatures ranging from 520°C to 600°C, with an activation energy of 10.4
kcal/mol. The growth rate was linearly dependent on the group III flow and has a complex dependence on the group V constituents. A room temperature photoluminescence wavelength of >1.3
μm was observed for unannealed GaAs
0.69Sb
0.3N
0.01. Low temperature (4
K) photoluminescence of GaAs
0.69Sb
0.3N
0.01 shows an increase in FWHM of 2.4–3.4 times the FWHM of GaAs
0.7Sb
0.3, a red shift of 55–77
meV, and a decrease in intensity of one to two orders of magnitude. Hall measurements indicate a behavior similar to that of InGaAsN, a 300
K hole mobility of 350
cm
2/V-s with a 1.0×10
17/cm
3 background hole concentration, and a 77
K mobility of 1220
cm
2/V-s with a background hole concentration of 4.8×10
16/cm
3. The hole mass of GaAs
0.7Sb
0.3/GaAs heterostructures was estimated at 0.37–0.40
m
o, and we estimate an electron mass of 0.2–0.3
m
o for the GaAs
0.69Sb
0.3N
0.01/GaAs system. The reduced exciton mass for GaAsSbN was estimated at about twice that found for GaAsSb by a comparison of diamagnetic shift vs. magnetic field.