Fabrication of Si-based nanoimprint stamps with sub-20 nm features

• Published in: Micro and Nano Engineering 2001,2001-09-16 - 2001-09-19 Vol. 61; pp. 449 - 454
• Main Authors: Maximov, I., Sarwe, E.-L., Beck, M., Deppert, K., Graczyk, M., Magnusson, M.H., Montelius, L.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01-07-2002; Elsevier Science
• Subjects: Aerosols; Applied sciences; Condensed Matter Physics; Den kondenserade materiens fysik; Electron beam lithography; Electronics; Etching; Exact sciences and technology; Fysik; Microelectronic fabrication (materials and surfaces technology); Nanoimprint; Natural Sciences; Naturvetenskap; Physical Sciences; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Aerosols; Etching; Electron beam lithography; Nanoimprint; Performance evaluation; Particle size; Patterning; Hot process; Embossing; Optimization; Microelectronic fabrication; Lift off; Reactive ion etching; Positive resist; Exposure time; Double layers; Nanotechnology
• ISSN: 0167-9317; 1873-5568; 1873-5568
• DOI: 10.1016/S0167-9317(02)00488-4

We present two alternative methods for fabrication of nanoimprint lithography stamps in SiO
2 with sub-20 nm features: (a) optimized electron beam lithography (EBL) and lift-off patterning of a 15-nm thick Cr mask, and (b) aerosol deposition of W particles in the 20-nm size range. In both cases, the pattern transfer into SiO
2 was performed using reactive ion etching (RIE) with CHF
3 as etch gas. In the first approach, we used a double layer resist system (PMMA/ZEP 520A7 positive resists) for the EBL exposure. Resist thickness, exposure dose and development time were optimized to obtain 15–20 nm features after Cr lift-off. In the second approach, we used size selected W aerosol particles as etch masks during etching of SiO
2. Both methods of stamp fabrication are compared and discussed.