Indentation-induced phase transformations in silicon: influences of load, rate and indenter angle on the transformation behavior

• Published in: Acta materialia Vol. 53; no. 6; pp. 1759 - 1770
• Main Authors: Jang, Jae-il, Lance, M.J., Wen, Songqing, Tsui, Ting Y., Pharr, G.M.
• Format: Journal Article
• Language: English
• Published: Oxford Elsevier Ltd 01-04-2005; Elsevier Science
• Subjects: Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Nanoindentation; Other topics in materials science; Phase transformations; Physics; Raman spectroscopy; Silicon; Silicon; Phase transformations; Raman spectroscopy; Nanoindentation; Composition effect; Indentation
• ISSN: 1359-6454; 1873-2453
• DOI: 10.1016/j.actamat.2004.12.025

Nanoindentation has been used widely to study pressure-induced phase transformations in Si. Here, a new aspect of the behavior is examined by making nanoindentations on (1
0
0) single crystals using a series of triangular pyramidal indenters with centerline-to-face angles varying from 35.3° to 85.0°. Effects of indenter angle, maximum load, and loading/unloading rate are systematically characterized from nanoindentation load–displacement data in conjunction with micro-Raman imaging spectroscopy of the residual hardness impressions. Results are discussed in terms of prevailing ideas and models for indentation-induced phase transformations in silicon.