Microstructure, optical and electrical properties of Al-doped ZnO films grown by MOCVD

• Published in: Applied surface science Vol. 258; no. 22; pp. 8595 - 8598
• Main Authors: Su, Jianfeng, Tang, Chunjuan, Niu, Qiang, Zang, Chunhe, Zhang, Yongsheng, Fu, Zhuxi
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01-09-2012; Elsevier
• Subjects: Al doped; Aluminum; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Doping; Electrical properties; Exact sciences and technology; Grain boundaries; MOCVD; Optical properties; Physics; Quantum confinement; Zinc oxide; ZnO; MOCVD; Al doped; ZnO; Inorganic compounds; Transition element compounds; Doped materials; Zinc oxide; Microstructure; Film growth
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2012.05.056

► Al-doped ZnO films were grown on quartz substrates by MOCVD. ► The preferred orientation of ZnO films decreased with the increase of Al content. ► Decomposition products of TMA bringing down the surface activity of ZnO grains. ► UV emission peak initially red-shifted and then blue-shifted as increasing Al content. ► Low electrical resistivity of Al-doped ZnO films was obtained.
Al-doped ZnO films were grown on quartz substrates by MOCVD. A systematical and detailed study about the effect of Al content on structural, optical and electrical properties were discussed. XRD measurements revealed that the preferred orientation of ZnO films decreased with the increase of Al content. AFM images indicated that the TMA molecules or their decomposition products bringing down the surface activity of ZnO grains, and so grain growth is inhibited. By the band tail states and the quantum confinement effect, the UV emission peak initially red-shifted and then blue-shifted. All Al-doped samples demonstrated more than 80% of the optical transparency in the visible region. Low electrical resistivity of Al-doped ZnO films was obtained. However, due to defects and grain boundary scattering which caused by Al doping, the hall mobility is increased initially and then decreased.