Theoretical enhancement of solar cell efficiency by the application of an ideal ‘down-shifting’ thin film

Poor ultraviolet (UV) quantum conversion efficiency contributes to a reduction in the efficiency of silicon based photovoltaic cells. In the UV, the main loss mechanism is through surface recombination of photo-generated carriers due to the shallow absorption depth of high energy photons. One method...

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Bibliographic Details
Published in:Solar energy materials and solar cells Vol. 98; pp. 455 - 464
Main Authors: Thomas, C.P., Wedding, A.B., Martin, S.O.
Format: Journal Article
Language:English
Published: Amsterdam Elsevier B.V 01-03-2012
Elsevier
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Summary:Poor ultraviolet (UV) quantum conversion efficiency contributes to a reduction in the efficiency of silicon based photovoltaic cells. In the UV, the main loss mechanism is through surface recombination of photo-generated carriers due to the shallow absorption depth of high energy photons. One method for greater utilisation of the UV region is by down-shifting UV photons to lower energies where the quantum efficiency of silicon is higher. This work determines the potential enhancement in efficiency that can be obtained by a luminescent down-shifting layer applied to silicon based solar cells. The efficiency is determined through detailed balance arguments. The maximum calculated efficiency enhancement due to an ideal down shifting process is 0.6% absolute using the AM1.5G standard spectra. Applying a similar analysis to a multicrystalline silicon solar cell results in an efficiency enhancement due to the down-shifting process of 0.17% absolute. ► Theoretical analysis of UV down-shifting applied to Si solar Cells. ► Efficiency is determined via detailed balance. ► Abeles' relations are used to model multiple optical layers. ► Optical layers are optimised for cell efficiency and down-shifting.
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ISSN:0927-0248
1879-3398
DOI:10.1016/j.solmat.2011.11.027