Microstructure and growth mechanism of SiC whiskers on carbon/carbon composites prepared by CVD

• Published in: Materials letters Vol. 59; no. 19-20; pp. 2593 - 2597
• Main Authors: Qiangang, Fu, Hejun, Li, Xiaohong, Shi, Kezhi, Li, Zhibiao, Hu, Jian, Wei
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01-08-2005
• Subjects: Carbon/carbon composites; CVD; Growth mechanism; Microstructure; SiC whisker; CVD; Microstructure; SiC whisker; Carbon/carbon composites; Growth mechanism
• ISSN: 0167-577X; 1873-4979
• DOI: 10.1016/j.matlet.2005.02.088

The SiC whiskers of good quality are expected to act as the reinforcing element in the ceramic coatings for C/C composites. Using CH3SiCl3(MTS) and H2 as the precursors, SiC whiskers were prepared on the surface of C/C composites by chemical vapor deposition (CVD) at normal atmosphere pressure. XRD, SEM and TEM analyses show that the whiskers are β-SiC structure and their diameters are several-hundred nanometers. With the descending MTS concentration in the depositing room, the purity of the as-prepared whiskers increases and the diameters of the whiskers decrease. The investigation of growth mechanism shows the CVD-SiC whiskers grown up by the vapor–solid (VS) growth process.