Ultralow silicon substrate noise crosstalk using metal Faraday cages in an SOI technology

• Published in: IEEE transactions on electron devices Vol. 51; no. 3; pp. 486 - 491
• Main Authors: Stefanou, S., Hamel, J.S., Baine, P., Bain, M., Armstrong, B.M., Gamble, H.S., Kraft, M., Kemhadjian, H.A.
• Format: Journal Article Web Resource
• Language: English
• Published: New York IEEE 01-03-2004; The Institute of Electrical and Electronics Engineers, Inc. (IEEE); Institute of Electrical and Electronics Engineers
• Subjects: Crosstalk; Devices; Electrical & electronics engineering; Engineering, computing & technology; Faraday cage; Ingénierie électrique & électronique; Ingénierie, informatique & technologie; Noise; Reduction; Semiconductor device noise; Silicon on insulator technology; Silicon substrates
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2003.822348

Ultralow substrate crosstalk is demonstrated using a novel metal Faraday cage isolation scheme in silicon-on-insulator technology. Over ten times reduction in crosstalk is demonstrated up to 10 GHz, compared to previously reported substrate crosstalk suppression technologies.