High uniformity deposition with chemical beams in high vacuum

• Published in: Thin solid films Vol. 427; no. 1; pp. 411 - 416
• Main Authors: Benvenuti, G., Halary-Wagner, E., Brioude, A., Hoffmann, P.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Lausanne Elsevier B.V 03-03-2003; Elsevier Science; Elsevier
• Subjects: Chemical Sciences; Compact reactor; Condensed Matter; Cross-disciplinary physics: materials science; rheology; Engineering Sciences; Exact sciences and technology; Inorganic chemistry; Large area deposition; Light assisted deposition; Material chemistry; Materials; Materials Science; Methods of deposition of films and coatings; film growth and epitaxy; Micro and nanotechnologies; Microelectronics; Molecular beams; Molecular, atomic, ion, and chemical beam epitaxy; Physics; Uniform thickness; Compact reactor; Molecular beams; Uniform thickness; Large area deposition; Light assisted deposition; Patterning; Inorganic compounds; Anatase; Transition element compounds; Crystal growth from vapors; Amorphous state; Experimental study; Substrates; Crystalline state; Thin films; Thickness; Titanium oxides; Reactors; Molecular beam epitaxy; GSMBE method; Mathematical models; Uniformity
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/S0040-6090(02)01190-2

A mathematical model is applied to build a compact reactor for uniform thickness deposition in the molecular beam regime. The injector system uses a gas source and is compatible with perpendicular light illumination of the substrate for patterned deposition (etching). Titanium dioxide deposition is achieved and experimental results are compared to the mathematical model. Thickness uniformity better than 2% is experimentally achieved on a 150-mm diameter substrate and is compared to the 1% calculated. This approach allows a compact reactor design and an easy up grading in deposition area size and illumination optics design for light assisted processes.