Nanoscale patterning by focused ion beam enhanced etching for optoelectronic device fabrication

• Published in: Microelectronic engineering Vol. 57; pp. 891 - 896
• Main Authors: Rennon, S., Bach, L., König, H., Reithmaier, J.P., Forchel, A., Gentner, J.L., Goldstein, L.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01-09-2001; Elsevier Science
• Subjects: Applied sciences; Distributed feedback laser; Electronics; Exact sciences and technology; Focused ion beam lithography; InP-etching; Microelectronic fabrication (materials and surfaces technology); Nano-fabrication; Optoelectronic devices; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Single mode laser; Focused ion beam lithography; Single mode laser; InP-etching; Nano-fabrication; Distributed feedback laser; Optoelectronic device; Microelectronic fabrication; Patterning; Nanostructure; Ion beam lithography; Focused ion beam technology
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/S0167-9317(01)00451-8

A technique for highly resolved maskless patterning is obtained by combining focused ion beam lithography with wet chemical etching. When exposing InP to a focused Ga
+-ion beam it acts like a photoresist with hydrofluoric acid (HF) as the appropriate developer. This technology allows the fabrication of filter gratings for single mode emitting lasers. Distributed feedback (DFB) and distributed Bragg-reflector (DBR) lasers with a high single mode stability and side mode suppression ratios (SMSR) above 50 dB were realized. The devices show no degradation after more than 10 000 h of cw operation.