Electron mobility in Si delta doped GaAs

• Published in: Physica. B, Condensed matter Vol. 211; no. 1; pp. 462 - 465
• Main Authors: Koenraad, P.M., van de Stadt, A.F.W., Shi, J.M., Hai, G.Q., Studart, N., Vansant, P., Peeters, F.M., Devreese, J.T., Perenboom, J.A.A.J., Wolter, J.H.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01-05-1995; Elsevier
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Conductivity phenomena in semiconductors and insulators; Electronic transport in condensed matter; Exact sciences and technology; Low-field transport and mobility; piezoresistance; Physics; Gallium arsenides; Inorganic compounds; Semiconductor materials; Scattering; Impurity ionization; Planar doping; Subband; Experimental study; Silicon additions; Charge distribution; Thickness; Quantity ratio; Electron mobility; Transport processes; Quantum transport
• ISSN: 0921-4526; 1873-2135
• DOI: 10.1016/0921-4526(94)01094-H

We have measured the transport and quantum mobility in Si delta doped samples as a function of the doping concentration and the thickness of the doping layer. The results are compared with mobility calculations which show that the ionized impurity scattering rate is determined by the fluctuations in the charge distribution of the delta layer instead of the full charge distribution itself.