Behavior of deuterium in boron films covered by oxygen-containing layer

• Published in: Journal of nuclear materials Vol. 367; pp. 1503 - 1506
• Main Authors: Wang, M.X., Yoshikawa, A., Miyauchi, H., Nakahata, T., Oya, Y., Noda, N., Okuno, K.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01-08-2007; Elsevier
• Subjects: Applied sciences; Controled nuclear fusion plants; Energy; Energy. Thermal use of fuels; Exact sciences and technology; Installations for energy generation and conversion: thermal and electrical energy; Deuterium; Plasma; Nuclear fusion reactor; Boron; Helium; Chemical vapor deposition
• ISSN: 0022-3115; 1873-4820
• DOI: 10.1016/j.jnucmat.2007.04.011

The behavior of deuterium in boron films covered by an oxygen-containing layer was studied by means of XPS and TDS. The pure boron films were deposited on a Si substrate by plasma chemical vapor deposition (PCVD) using a mixture of the gases, decaborane (B
10H
14) and helium, and two kinds of boron films covered by oxidized boron layer were prepared on pure boron films by PCVD using B
10H
14, He and O
2, and by oxidation using O
2
+
He plasma, respectively. Boron films were irradiated by 3
keV
D
2
+
at a flux of 1
×
10
18
D
+
m
−2
s
−1 up to 1
×
10
22
D
+
m
−2. It was found that less oxygen in the surface layer of the boron film can reduce the deuterium retention and the oxygen in the boron film is preferentially sputtered by deuterium ions due to chemical reactions between deuterium and oxygen during the
D
2
+
irradiation.