Determination of lateral barrier height of identically prepared Ni/n -type Si Schottky barrier diodes by electrodeposition
Ni/n-Si/Au–Sb (21 dots) Schottky barrier diodes (SBDs) have been identically prepared by the electrodeposition method. The electrodeposition of Ni films on the n-type Si substrate has been carried out at a constant current density from an aqueous electrolyte of sulfate of Ni. The barrier height for...
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| Published in: | Physica. B, Condensed matter Vol. 403; no. 13; pp. 2211 - 2214 |
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| Main Authors: | , , , |
| Format: | Journal Article |
| Language: | English |
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Elsevier B.V
01-07-2008
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| Abstract | Ni/n-Si/Au–Sb (21 dots) Schottky barrier diodes (SBDs) have been identically prepared by the electrodeposition method. The electrodeposition of Ni films on the n-type Si substrate has been carried out at a constant current density from an aqueous electrolyte of sulfate of Ni. The barrier height for the electrodeposited Ni/n-Si/ SBDs from the current–voltage (
I–V) characteristics has varied from 0.58 to 0.70
eV, and ideality factor
n from 1.10 to 1.66. We have determined a lateral homogeneous barrier height value of approximately 0.69
eV for the electrodeposited Ni/n-Si/SBDs from the experimental linear relationship between the barrier heights and ideality factors. The experimental Schottky barrier height (SBH) distribution obtained from the
I–V characteristics has been fitted by a Gaussian function and a mean SBH value of 0.63
eV with a standard deviation of 30
meV has been obtained for the Ni/n-Si SBDs. |
|---|---|
| AbstractList | Ni/n-Si/Au–Sb (21 dots) Schottky barrier diodes (SBDs) have been identically prepared by the electrodeposition method. The electrodeposition of Ni films on the n-type Si substrate has been carried out at a constant current density from an aqueous electrolyte of sulfate of Ni. The barrier height for the electrodeposited Ni/n-Si/ SBDs from the current–voltage (
I–V) characteristics has varied from 0.58 to 0.70
eV, and ideality factor
n from 1.10 to 1.66. We have determined a lateral homogeneous barrier height value of approximately 0.69
eV for the electrodeposited Ni/n-Si/SBDs from the experimental linear relationship between the barrier heights and ideality factors. The experimental Schottky barrier height (SBH) distribution obtained from the
I–V characteristics has been fitted by a Gaussian function and a mean SBH value of 0.63
eV with a standard deviation of 30
meV has been obtained for the Ni/n-Si SBDs. Ni/n-Si/Au-Sb (21 dots) Schottky barrier diodes (SBDs) have been identically prepared by the electrodeposition method. The electrodeposition of Ni films on the n-type Si substrate has been carried out at a constant current density from an aqueous electrolyte of sulfate of Ni. The barrier height for the electrodeposited Ni/n-Si/ SBDs from the current-voltage (I-V) characteristics has varied from 0.58 to 0.70 eV, and ideality factor n from 1.10 to 1.66. We have determined a lateral homogeneous barrier height value of approximately 0.69 eV for the electrodeposited Ni/n-Si/SBDs from the experimental linear relationship between the barrier heights and ideality factors. The experimental Schottky barrier height (SBH) distribution obtained from the I-V characteristics has been fitted by a Gaussian function and a mean SBH value of 0.63 eV with a standard deviation of 30 meV has been obtained for the Ni/n-Si SBDs. |
| Author | Güllü, Ö. Bakkaloglu, Ö.F. Türüt, A. Güler, G. |
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| Cites_doi | 10.1116/1.2218874 10.1016/S0038-1101(99)00268-3 10.1016/S0169-4332(01)00918-7 10.1088/0268-1242/11/8/015 10.1088/0268-1242/19/9/007 10.1088/0268-1242/21/6/021 10.1063/1.1380220 10.1063/1.112300 10.1016/S0038-1098(02)00829-3 10.1016/S0038-1101(99)00200-2 10.1016/S0038-1101(97)00232-3 10.1103/PhysRevB.45.13509 10.1016/S0167-9317(03)00224-7 10.1016/S0921-4526(03)00431-9 10.1016/S0921-4526(02)01515-6 10.1016/j.sse.2006.06.001 10.1016/0039-6028(95)00079-8 10.1063/1.366370 10.1116/1.590839 10.1016/j.physb.2004.01.002 10.1063/1.347243 10.1109/TMAG.2005.854737 10.1016/j.apsusc.2004.05.046 10.1021/jp011861c 10.1016/j.sse.2005.11.004 10.1103/PhysRevB.64.075310 10.1016/0038-1101(86)90145-0 10.1016/0038-1101(81)90001-0 10.1016/j.physb.2007.06.002 10.1088/0268-1242/16/12/305 10.1063/1.2769284 10.1063/1.349737 10.1063/1.369185 10.1016/j.sse.2005.03.005 10.1016/j.apsusc.2005.01.009 |
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| Keywords | Barrier inhomogeneity 73.40.Ei 73.40.Ns 73.40.Sx Schottky barrier height Silicon Metal–semiconductor–metal contacts 73.30.+y Gold Schottky barriers Antimony Metal-semiconductor-metal contacts Metal metal contact Metal-semiconductor contacts Metal-semiconductor-metal structures Electrodeposition Nickel Barrier height IV characteristic |
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| Snippet | Ni/n-Si/Au–Sb (21 dots) Schottky barrier diodes (SBDs) have been identically prepared by the electrodeposition method. The electrodeposition of Ni films on the... Ni/n-Si/Au-Sb (21 dots) Schottky barrier diodes (SBDs) have been identically prepared by the electrodeposition method. The electrodeposition of Ni films on the... |
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| SubjectTerms | Barrier inhomogeneity Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Metal–semiconductor–metal contacts Physics Schottky barrier height Silicon Surface double layers, schottky barriers, and work functions |
| Title | Determination of lateral barrier height of identically prepared Ni/n -type Si Schottky barrier diodes by electrodeposition |
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