Determination of lateral barrier height of identically prepared Ni/n -type Si Schottky barrier diodes by electrodeposition

• Published in: Physica. B, Condensed matter Vol. 403; no. 13; pp. 2211 - 2214
• Main Authors: Guler, G, Gullu, O, Bakkaloglu, O F, Turut, A
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01-07-2008; Elsevier
• Subjects: Barrier inhomogeneity; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Metal–semiconductor–metal contacts; Physics; Schottky barrier height; Silicon; Surface double layers, schottky barriers, and work functions; Barrier inhomogeneity; 73.40.Ei; 73.40.Ns; 73.40.Sx; Schottky barrier height; Silicon; Metal–semiconductor–metal contacts; 73.30.+y; Gold; Schottky barriers; Antimony; Metal-semiconductor-metal contacts; Metal metal contact; Metal-semiconductor contacts; Metal-semiconductor-metal structures; Electrodeposition; Nickel; Barrier height; IV characteristic
• ISSN: 0921-4526; 1873-2135
• DOI: 10.1016/j.physb.2007.11.032

Ni/n-Si/Au–Sb (21 dots) Schottky barrier diodes (SBDs) have been identically prepared by the electrodeposition method. The electrodeposition of Ni films on the n-type Si substrate has been carried out at a constant current density from an aqueous electrolyte of sulfate of Ni. The barrier height for the electrodeposited Ni/n-Si/ SBDs from the current–voltage (
I–V) characteristics has varied from 0.58 to 0.70
eV, and ideality factor
n from 1.10 to 1.66. We have determined a lateral homogeneous barrier height value of approximately 0.69
eV for the electrodeposited Ni/n-Si/SBDs from the experimental linear relationship between the barrier heights and ideality factors. The experimental Schottky barrier height (SBH) distribution obtained from the
I–V characteristics has been fitted by a Gaussian function and a mean SBH value of 0.63
eV with a standard deviation of 30
meV has been obtained for the Ni/n-Si SBDs.