Limits on charge carrier mobility in suspended graphene due to flexural phonons

Limits on charge carrier mobility in suspended graphene due to flexural phonons

The temperature dependence of the mobility in suspended graphene samples is investigated. In clean samples, flexural phonons become the leading scattering mechanism at temperature T≳10 K, and the resistivity increases quadratically with T. Flexural phonons limit the intrinsic mobility down to a few...

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Bibliographic Details
Published in:Physical review letters Vol. 105; no. 26; p. 266601
Main Authors: Castro, Eduardo V, Ochoa, H, Katsnelson, M I, Gorbachev, R V, Elias, D C, Novoselov, K S, Geim, A K, Guinea, F
Format: Journal Article
Language:English
Published: United States 22-12-2010
Online Access:Get full text
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Summary:The temperature dependence of the mobility in suspended graphene samples is investigated. In clean samples, flexural phonons become the leading scattering mechanism at temperature T≳10 K, and the resistivity increases quadratically with T. Flexural phonons limit the intrinsic mobility down to a few m(2)/V s at room T. Their effect can be eliminated by applying strain or placing graphene on a substrate.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
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content type line 23
ISSN:0031-9007
1079-7114
DOI:10.1103/physrevlett.105.266601