NbOx based memristor as artificial synapse emulating short term plasticity

• Published in: AIP advances Vol. 9; no. 9; pp. 095022 - 095022-5
• Main Authors: Deswal, Sweety, Kumar, Ashok, Kumar, Ajeet
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 01-09-2019; AIP Publishing LLC
• Subjects: Biological activity; Memristors; Niobium oxides; Plastic properties; Resistance; Short term; Signal processing
• ISSN: 2158-3226; 2158-3226
• DOI: 10.1063/1.5118980

Memristors can mimic the functions of biological synapse, where it can simultaneously store the synaptic weight and modulate the transmitted signal. Here, we report Nb/Nb2O5/Pt based memristors with bipolar resistive switching, exhibiting synapse like property of gradual and continuously change of conductance with subsequent voltage signals. Mimicking of basic functions of remembering and forgetting processes of biological brain were demonstrated through short term plasticity, spike rate dependent plasticity, paired pulse facilitation and post-titanic potentiation. The device layer interface tuning was shown to affect the device properties shift from digital to analog behaviour. Demonstration of basic synaptic functions in the NbOx based devices makes them suitable for neuromorphic applications.