Reflection high-energy positron diffraction pattern from a Si(1 1 1)-(7 × 7) surface

• Published in: Surface science Vol. 600; no. 19; pp. 4426 - 4429
• Main Authors: Hayashi, K., Kawasuso, A., Ichimiya, A.
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 01-10-2006; Amsterdam Elsevier Science; New York, NY
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Low index single crystal surfaces; Physics; Reflection high-energy electron diffraction (RHEED); Silicon; Surface structure, morphology, roughness, and topography; Silicon; Surface structure, morphology, roughness, and topography; Low index single crystal surfaces; Reflection high-energy electron diffraction (RHEED); and topography; Silicon; Low index single crystal surfaces; Monocrystals; morphology; Roughness; Diffraction pattern; RHEED; Surface topography; Reflection high-energy electron diffraction (RHEED); Surface structure; Surface structure
• ISSN: 0039-6028; 1879-2758
• DOI: 10.1016/j.susc.2006.05.048

We have investigated the feature of reflection high-energy positron diffraction (RHEPD) pattern from a Si(1
1
1)-(7
×
7) surface. The RHEPD pattern observed in the total reflection condition is quite different from the conventional reflection high-energy electron diffraction (RHEED) pattern. This fact is attributed to the different penetration depths of positrons and electrons. We show that the intensity distribution of RHEPD pattern is reproduced considering the dimer-adatom-stacking fault (DAS) model with optimized atomic positions and scattering potentials of adatoms and rest atoms.