Absorption edge singularities in highly excited semiconductors

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Bibliographic Details
Published in:	Physical review letters Vol. 68; no. 1; pp. 110 - 113
Main Authors:	FOING, J.-P, HULIN, D, JOFFRE, M, JACKSON, M. K, OUDAR, J.-L, TANGUY, C, COMBESCOT, M
Format:	Journal Article
Language:	English
Published:	Ridge, NY American Physical Society 06-01-1992
Subjects:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Physics Femtosecond Singularity Semiconductor materials Differential absorption Infrared absorption Electron hole pair Experimental study Inorganic compound Thin film Gallium Arsenides Energy gap Fermi level Bleaching Hole burning Charge carrier concentration Impulse Excited state Absorption edge
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Summary:	Article abstract not included.
Bibliography:	ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 ObjectType-Article-2 ObjectType-Feature-1
ISSN:	0031-9007 1079-7114
DOI:	10.1103/physrevlett.68.110