Indium doped zinc oxide thin films obtained by electrodeposition

• Published in: Thin solid films Vol. 490; no. 2; pp. 124 - 131
• Main Authors: Machado, G., Guerra, D.N., Leinen, D., Ramos-Barrado, J.R., Marotti, R.E., Dalchiele, E.A.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Lausanne Elsevier B.V 01-11-2005; Elsevier Science
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Electrochemistry; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Optical Properties; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Physics; Semiconductors; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); X-ray diffraction; Electrochemistry; X-ray diffraction; Semiconductors; Optical Properties; Defect states; Inorganic compounds; Films; Doping; Transition element compounds; XRD; Precursor; Thin films; Hexagonal lattices; Zinc oxides; Energy gap; Aqueous solutions; Electrodeposition; Indium oxides; Pattern analysis; Codoping; X-ray photoelectron spectra
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2005.04.042

Indium doped ZnO thin films were obtained by co-electrodeposition (precursor and dopant) from aqueous solution. XRD analysis showed typical patterns of the hexagonal ZnO structure for both doped and undoped films. No diffraction peaks of any other structure such as In
2O
3 or In(OH)
3 were found. The incorporation of In into the ZnO film was verified by both EDS and XPS measurements. The bandgap energy of the films varied from 3.27 eV to 3.42 eV, increasing with the In concentration in the solution. This dependence was stronger for the less cathodic potentials. The incorporation of In into the film occurs as both, an In donor state in the ZnO grains and as an amorphous In
2O
3 at the grain boundaries.