Challenges in the implementation of low-k dielectrics in the back-end of line

• Published in: Microelectronic engineering Vol. 80; pp. 337 - 344
• Main Authors: Hoofman, R.J.O.M., Verheijden, G.J.A.M., Michelon, J., Iacopi, F., Travaly, Y., Baklanov, M.R., Tökei, Zs, Beyer, G.P.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01-06-2005; Elsevier Science
• Subjects: Applied sciences; dielectric reliability; electromigration; Electronics; Exact sciences and technology; Materials; mechanical integrity; plasma damage; pore sealing; porosity; thermal conductivity; ultra low-k materials; porosity; ultra low-k materials; plasma damage; mechanical integrity; dielectric reliability; thermal conductivity; pore sealing; electromigration; Performance evaluation; Dielectric loss; Thermal behavior; Mechanical properties; Porous material; Implementation; Thermal conductivity; Electrodiffusion; Miniaturization; Reliability; Low k dielectric; Microassembling; Interconnected system; Damaging
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2005.04.088

The introduction of ultra low-k materials in copper technology has been much slower than anticipated in the ITRS Roadmap. The introduction of porosity in low-k materials has increased the level of complexity tremendously. In this paper, the challenges appearing during the integration of ultra low-k dielectrics will be discussed, since a proper understanding of these issues is essential for downscaling of the interconnect system. The inferior mechanical and thermal properties were always identified as main showstoppers for low-k integration. However, the extreme vulnerability of porous low-k to produces-induced damage (accompanied with the loss of dielectric performance and reliability) demands a continuous innovation of materials, processes and integration approaches.