Response of Graphene Based Gated Nanodevices Exposed to THz Radiation

• Published in: EPJ Web of Conferences Vol. 103; pp. 10003 - 1-10003-2
• Main Authors: Fedorov, G.E., Gaiduchenko, I.A., Golikov, A.D., Rybin, M.G., Obraztsova, E.D., Voronov, B.M., Coquillat, D., Diakonova, N., Knap, W., Goltsman, G.N.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Les Ulis EDP Sciences 01-01-2015
• Subjects: Asymmetry; Channels; Configurations; Devices; Drains; Electrodes; Field effect transistors; Graphene; Nanotechnology devices; Optimization; Radiation detectors; Semiconductor devices; Spiral antennas; terahertz radiation; terahertz radiation detection
• ISSN: 2100-014X; 2101-6275; 2100-014X
• DOI: 10.1051/epjconf/201510310003

In this work we report on the response of asymmetric graphene based devices to subterahertz and terahertz radiation. Our devices are made in a configuration of a field-effect transistor with conduction channel between the source and drain electrodes formed with a CVD-grown graphene. The radiation is coupled through a spiral antenna to source and top gate electrodes. Room temperature responsivity of our devices is close to the values that are attractive for commercial applications. Further optimization of the device configuration may result in appearance of novel terahertz radiation detectors.