A High-Efficiency Solution-Deposited Thin-Film Photovoltaic Device

High‐quality Cu(In,Ga)Se2 (CIGS) films are deposited from hydrazine‐based solutions and are employed as absorber layers in thin‐film photovoltaic devices. The CIGS films exhibit tunable stoichiometry and well‐formed grain structure without requiring post‐deposition high‐temperature selenium treatmen...

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Bibliographic Details
Published in:	Advanced materials (Weinheim) Vol. 20; no. 19; pp. 3657 - 3662
Main Authors:	Mitzi, David B., Yuan, Min, Liu, Wei, Kellock, Andrew J., Chey, S. Jay, Deline, Vaughn, Schrott, Alex G.
Format:	Journal Article
Language:	English
Published:	Weinheim WILEY-VCH Verlag 02-10-2008 WILEY‐VCH Verlag
Subjects:	photovoltaic devices solar cells thin films
Online Access:	Get full text
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Summary:	High‐quality Cu(In,Ga)Se2 (CIGS) films are deposited from hydrazine‐based solutions and are employed as absorber layers in thin‐film photovoltaic devices. The CIGS films exhibit tunable stoichiometry and well‐formed grain structure without requiring post‐deposition high‐temperature selenium treatment. Devices based on these films offer power conversion efficiencies of 10% (AM1.5 illumination).
Bibliography:	ark:/67375/WNG-ZZ0X3PKL-9 The authors thank R. Ferlita and S. Rossnagel for technical support with the preparation of the Ni/Al grid and ZnO films, respectively, and H. Hovel for technical assistance in performing the PV device measurements. istex:532019CF5C31B19FC9039E49140794C557B26BD9 ArticleID:ADMA200800555 ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23
ISSN:	0935-9648 1521-4095
DOI:	10.1002/adma.200800555