High-Brightness Quantum Well Tapered Lasers

• Published in: IEEE journal of selected topics in quantum electronics Vol. 15; no. 3; pp. 1009 - 1020
• Main Authors: Sumpf, B., Hasler, K.-H., Adamiec, P., Bugge, F., Dittmar, F., Fricke, J., Wenzel, H., Zorn, M., Erbert, G., Trankle, G.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-05-2009; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Beams (radiation); Brightness; Diffraction; Diode lasers; Emission; Fiber lasers; Laser beams; Lasers; Optical feedback; Power amplifiers; Power generation; Power lasers; Pump lasers; Quantum electronics; Quantum well lasers; Semiconductor lasers; Spectra; Wavelengths
• ISSN: 1077-260X; 1558-4542
• DOI: 10.1109/JSTQE.2008.2010952

High-power quantum well lasers with high brightness in the spectral range between 650 nm and 1080 nm will be presented. Improved layer structures with a narrow vertical far-field divergence down to angles of 15deg (full-width at half-maximum) were developed. For these layer structures, optimized tapered lasers were processed to achieve laterally a nearly diffraction-limited beam quality with beam propagation factors smaller than 2. Depending on the emission wavelength, the tapered devices reach an output power up to 12 W and a brightness of 1 GWmiddotcm -2 middotsr -1 .