Electron mobility enhancement using ultrathin pure Ge on Si substrate

• Published in: IEEE electron device letters Vol. 26; no. 10; pp. 761 - 763
• Main Authors: Chia Ching Yeo, Byung Jin Cho, Gao, F., Lee, S.J., Lee, M.H., Yu, C.-Y., Liu, C.W., Tang, L.J., Lee, T.W.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01-10-2005; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Channels; Charge carrier processes; CMOS process; Crystals; Degradation; Devices; Dielectric devices; Dielectric substrates; Effective electron mobility; Electron mobility; Electronics; Exact sciences and technology; Germanium; high; Mechanical factors; MOSFET circuits; Raw materials; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon; Silicon substrates; Thin films; Transistors; Ultrathin films; MOSFET; Layered crystals; Dielectric properties; Coatings; Thin film; high-K gate dielectric; Electron mobility; High k dielectric; Effective electron mobility; NMOS technology; Wafer; Ge
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2005.855420

We demonstrate enhancement of electron mobility in nMOSFET using an ultrathin pure Ge crystal channel layer directly grown on a bulk Si wafer. A thin Si crystal layer is also grown on top of a Ge crystal channel layer as a capping layer. Using the Si/Ge/Si structure, a maximum 2.2X enhancement in electron mobility is achieved while good gate dielectric properties and junction qualities of bulk Si devices are maintained.