Detection of deposition rate of plasma-polymerized acrylate and methacrylate derivatives using quartz crystal microbalance

The deposition rates of plasma-polymerized (pp-)films of 12 acrylate derivatives (CH 2CHCOOR: substitution R is H, CH 3, CHCH 2, CH 2CH 3, CH 2CH 2CH 3, (CH 2) 3CH 3, C(CH 3) 3, CH 2CH(CH 3) 2, CH 2(CH 2) 4CH 3, CH 2CF 3, CH 2CF 2CF 3, CH 2(CF 2) 2CF 3), and 12 methacrylate derivatives...

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Bibliographic Details
Published in:Thin solid films Vol. 457; no. 1; pp. 26 - 33
Main Authors: Kurosawa, Shigeru, Atthoff, Björn, Aizawa, Hidenobu, Hilborn, Jöns
Format: Journal Article Conference Proceeding
Language:English
Published: Lausanne Elsevier B.V 01-06-2004
Elsevier Science
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Summary:The deposition rates of plasma-polymerized (pp-)films of 12 acrylate derivatives (CH 2CHCOOR: substitution R is H, CH 3, CHCH 2, CH 2CH 3, CH 2CH 2CH 3, (CH 2) 3CH 3, C(CH 3) 3, CH 2CH(CH 3) 2, CH 2(CH 2) 4CH 3, CH 2CF 3, CH 2CF 2CF 3, CH 2(CF 2) 2CF 3), and 12 methacrylate derivatives (CH 2CCH 3COOR′: substitution R′ is H, CH 3, CHCH 2, CH 2CH 3, CH 2CH 2CH 3, (CH 2) 3CH 3, C(CH 3) 3, CH 2CH(CH 3) 2, CH 2(CH 2) 4CH 3, CH 2CF 3, CH 2CF 2CF 3, CH 2(CF 2) 2CF 3) are determined by the quartz crystal microbalance technique. Using the same polymerization conditions (100 W RF and 100 Pa vapor pressure) for the various monomers, it is found that the deposition rates were proportional to the polymerization time. The average deposition rate of pp-acrylate derivatives is larger than that of pp-methacrylate derivatives without pp-hexylacrylate. The average deposition rate of pp-fluoroalkylacrylates was higher than 7–25 times that of pp-alkylacrylate, and the average deposition rate of pp-fluoroalkylmethacrylates was higher than 10–31 times that of pp-alkylmethacrylates, respectively. The average deposition rate of pp-film depends on the chemical structure of the monomer suggesting different mechanisms under plasma-polymerization.
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content type line 23
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2003.12.008