Stray Inductance Reduction of Commutation Loop in the P-cell and N-cell-Based IGBT Phase Leg Module
This paper proposes a novel packaging method for insulated-gate bipolar transistor (IGBT) modules based on the concepts of P-cell and N-cell. The novel packaging reduces the stray inductance in the current commutation path in a phase-leg module and hence improves the switching behavior. A P-cell- an...
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Published in: | IEEE transactions on power electronics Vol. 29; no. 7; pp. 3616 - 3624 |
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Main Authors: | , , , |
Format: | Journal Article |
Language: | English |
Published: |
New York, NY
IEEE
01-07-2014
Institute of Electrical and Electronics Engineers The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects: | |
Online Access: | Get full text |
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Summary: | This paper proposes a novel packaging method for insulated-gate bipolar transistor (IGBT) modules based on the concepts of P-cell and N-cell. The novel packaging reduces the stray inductance in the current commutation path in a phase-leg module and hence improves the switching behavior. A P-cell- and N-cell-based module and a conventional module are designed. Using finite-element-analysis-based Ansys Q3D Extractor, electromagnetic simulations are conducted to extract the stray inductance from the two modules. Two prototype phase-leg modules based on the two different designs are fabricated. The parasitics are measured using a precision impedance analyzer. Finally, a double pulse tester based-switching characterization is performed to illustrate the effect of stray inductance reduction in the proposed packaging design. The experimental results show the reduction in overshoot voltage with the proposed layout. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0885-8993 1941-0107 |
DOI: | 10.1109/TPEL.2013.2279258 |