Extremely large and significantly anisotropic magnetoresistance in ZrSiS single crystals

• Published in: Applied physics letters Vol. 108; no. 24
• Main Authors: Lv, Yang-Yang, Zhang, Bin-Bin, Li, Xiao, Yao, Shu-Hua, Chen, Y. B., Zhou, Jian, Zhang, Shan-Tao, Lu, Ming-Hui, Chen, Yan-Feng
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 13-06-2016
• Subjects: ANISOTROPY; Applied physics; CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; FERMI LEVEL; Fermi surfaces; Holes (electron deficiencies); Intermetallic compounds; MAGNETIC FIELDS; Magnetic properties; MAGNETORESISTANCE; Magnetoresistivity; MONOCRYSTALS; SENSORS; Single crystals; TELLURIDES; TRANSITION ELEMENTS; Transition metals
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.4953772

Recently, the extremely large magnetoresistance (MR) observed in transition metal telluride, like WTe2, attracted much attention because of the potential applications in magnetic sensor. Here, we report the observation of extremely large magnetoresistance as 3.0 × 104% measured at 2 K and 9 T magnetic field aligned along [001]-ZrSiS. The significant magnetoresistance change (∼1.4 × 104%) can be obtained when the magnetic field is titled from [001] to [011]-ZrSiS. These abnormal magnetoresistance behaviors in ZrSiS can be understood by electron-hole compensation and the open orbital of Fermi surface. Because of these superior MR properties, ZrSiS may be used in the magnetic sensors.